SSF3036C ? silikron semiconductor co.,ltd. 20 12 . 02 . 02 version : 1.0 page 1 of 6 www.silikron.com main product characteristics: features and benefits : description : absolute max rating : symbol parameter max. units n - channel p - channel i d @ tc = 25c continuous drain current, v gs @ 10v (silicon limited) 4 - 3.6 a i dm pulsed drain current 16 - 14.4 v gs g ate to source voltage 12 12 v p d @tc = 25c power dissipation 2.1 1.3 w t j t stg operating junction and storage temperature range - 55 to + 150 - 55 to + 150 c thermal resistance symbol charact erizes typ. max. units n - channel p - channel r j a junction - to - ambient ( t 5 s ) 60 95 /w nmos pmos v dss 30v - 30v r ds (on) 32.4mohm 61.6mohm i d 4 a - 3.6 a schematic diagram it utilizes the latest trench processing techniques to ach ieve the high cell density and reduces t he on - resistance with high repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications . dfn 3 x 2 - 8l bottom view n - channel mosfet p - channel mosfet ? advanced process technology ? special designed for pwm, load sw itching and general purpose applications ? u ltra low on - resistance with low gate charge ? f ast switching and reverse body recovery ? 150 operating temperature
SSF3036C ? silikron semiconductor co.,ltd . 20 1 2 . 02 . 02 version : 1. 0 page 2 of 6 www.silikron.com electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max . units conditions v ( b r) dss drain - to - source breakdown voltage n - channel 30 v v gs = 0v, i d = 250a p - channel - 30 v gs = 0v, i d = - 250a r ds(on) static drain - to - source on - resistance n - channel 32.4 36 m v gs = 4.5v, i d = 4.8 a p - channel 61.6 65 v gs = - 4.5v, i d = - 2.3 a v gs(th) gate threshold voltage n - channel 0.5 2 v v ds = v gs , i d = 250a p - channel - 0.5 - 2 v ds = v gs , i d = - 250a i dss drain - to - source leakage current n - channel 1 a v ds = 30 v,v gs = 0v p - channel - 1 v ds = - 30 v,v gs = 0v i gss gate - to - source forward leakage n - channe l 100 n a v gs = 12 v n - channel - 100 v gs = - 12 v p - channel 100 v gs = 12 v p - channel - 100 v gs = - 12 v source - drain ratings and characteristics symbol parameter min. typ. max . units conditions i s continuous source current n - channel 4 a mosfet symbol showing the integral reverse p - n junction diode. p - channel - 3.6 i s m pulsed source current n - channel 16 a p - channel - 14.4 v sd diode forward voltage n - channel 0.82 1. 2 v i s = 2.4 a, v gs =0v p - channel - 0. 85 - 1.2 i s = - 1.5 a, v gs =0v
SSF3036C ? silikron semiconductor co.,ltd . 20 1 2 . 02 . 02 version : 1. 0 page 3 of 6 www.silikron.com test circuits and waveforms : n otes : the maximum current rating is limited by bond - wires. repetitive rating; pulse width limited by max. junction temperature. the power diss ipation pd is based on max. junction temperature, using junction - to - case thermal resistance. the value of rja is measured with the device mounted on 1in 2 fr - 4 board with 2oz. copper, in a still air environment with ta =25c t hermal characteristics switching time waveform : figure1. normalized thermal transient impedance, junction - to - ambient
SSF3036C ? silikron semiconductor co.,ltd . 20 1 2 . 02 . 02 version : 1. 0 page 4 of 6 www.silikron.com mechanical data min nom max min nom max a 0.700 0.750 0.800 0.028 0.030 0.031 a1 0.000 - 0.050 0.000 - 0.002 a3 d 2.950 3.000 3.050 0.116 0.118 0.120 e 1.950 2.000 2.050 0.077 0.079 0.081 b 0.250 0.300 0.350 0.010 0.012 0.014 l 0.280 0.350 0.420 0.016 0.014 0.017 e symbol dimension in millimeters dimension in inches 0.650bsc 0.026bsc 0.200ref 0.008ref dfn 3x2_8l package outline dimension
SSF3036C ? silikron semiconductor co.,ltd . 20 1 2 . 02 . 02 version : 1. 0 page 5 of 6 www.silikron.com ordering and marking information device marking: 3036c package (available) dfn 3 x 2 - 8l operating temperature range c : - 55 to 150 oc devices per unit package type units/t ube tubes/inner box units/inner box inner boxes/carton box units/carton box dfn 3 x 2 - 8l 3000pcs 10pcs 30000pcs 4pcs 120000pcs reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 1 50 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
SSF3036C ? silikron semiconductor co.,ltd . 20 1 2 . 02 . 02 version : 1. 0 page 6 of 6 www.silikron.com attention: any and all silikron produ cts described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life - support systems, aircraft's control systems, or other ap plications whose failure can be reasonably exp ected to result in serious physical and/or material damage. consult with your silikron representative nearest you before using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. to verify s ymptoms and states that cannot be evaluated in an independent device, th e customer should a lways evaluate and test devices mounted in the customers products or equipment. silikron semiconductor co.,ltd. strives to supply high - quality high - reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accident s or events t hat could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or tran smitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (incl uding circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringem ents of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delive ry specification" for the silikron product that you intend to use. this catalog provides information as of dec, 2008. specifications and information herein are subject to change without notice. customer service worldwide sales and service : sales@ sil ikron .com technical support: technical@ silikron .com suzhou silikron semiconductor corp. building 11a suchun industrial square, 428# xinglong street, suzhou p.r. chin a tel: (86 - 512 ) 62560688 fax: (86 - 512) 65160705 e - mail: sales@ silikron .com
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